IRFIZ48N

MOSFET N-CH 55V 36A TO220FP

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IRFIZ48N Picture
SeekIC No. : 003432820 Detail

IRFIZ48N: MOSFET N-CH 55V 36A TO220FP

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Part Number:
IRFIZ48N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 36A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 22A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 89nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1900pF @ 25V
Power - Max: 42W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 36A
Power - Max: 42W
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1900pF @ 25V
Package / Case: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 89nC @ 10V
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 16 mOhm @ 22A, 10V


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 25
IDM Pulsed Drain Current 210
PD @TC = 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 270 mJ
IAR Avalanche Current 32 A
EAR Repetitive Avalanche Energy 4.2 mJ
dv/dt Peak Diode Recovery dv/dt 5.6 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs IRFIZ48N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak IRFIZ48N eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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