Features: ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Electrically Isolated ·Dynamic dv/dt Rating ·Light-weight ·Screened to JANTX Level perMIL-PRF-19500Specifications Parameter Units ID @ VGS=-12V,TC=25 Continuous Drain Curren 35 A ID @...
IRFMJ044: Features: ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Electrically Isolated ·Dynamic dv/dt Rating ·Light-weight ·Screened to JANTX Level perMIL-PRF-19500Specifications ...
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Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren |
35 |
A |
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren |
28 | |
IDM |
Pulsed Drain Current |
140 | |
PD@ TC= 25 |
Power Dissipatio |
125 |
W |
Linear Derating Factor |
1.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
340 |
mJ |
IAR |
Avalanche Current |
35 |
A |
EAR |
Repetitive Avalanche Energy |
12.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
4.5 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Weight |
9.3 (Typical) |
g |
HEXFET® MOSFET technology IRFMJ044 is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry design achieves very low on-state resistance combined with high transconductance.HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers IRFMJ044, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totall isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.