IRFMJ044

Features: ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Electrically Isolated ·Dynamic dv/dt Rating ·Light-weight ·Screened to JANTX Level perMIL-PRF-19500Specifications Parameter Units ID @ VGS=-12V,TC=25 Continuous Drain Curren 35 A ID @...

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IRFMJ044 Picture
SeekIC No. : 004377203 Detail

IRFMJ044: Features: ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Electrically Isolated ·Dynamic dv/dt Rating ·Light-weight ·Screened to JANTX Level perMIL-PRF-19500Specifications ...

floor Price/Ceiling Price

Part Number:
IRFMJ044
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/2

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Product Details

Description



Features:

·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electrically Isolated
·Dynamic dv/dt Rating  
·Light-weight  
·Screened to JANTX Level per MIL-PRF-19500



Specifications

Parameter
Units
ID @ VGS=-12V,TC=25
Continuous Drain Curren
35
A
ID @ VGS=-12V,TC=100
Continuous Drain Curren
28
IDM
Pulsed Drain Current
140
PD@ TC= 25
Power Dissipatio
125
W
Linear Derating Factor
1.0
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
340
mJ
IAR
Avalanche Current
35
A
EAR
Repetitive Avalanche Energy
12.5
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/nS
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Weight
9.3 (Typical)
g



Description

HEXFET® MOSFET technology IRFMJ044 is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry design achieves very low on-state resistance combined with high transconductance.HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.  They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers IRFMJ044, high energy pulse circuits, and virtually any application where high reliability is required.  The HEXFET transistor's totall isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.




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