IRFL024Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 5.1A
Input Capacitance (Ciss) @ Vds: 340pF @ 25V
Packaging: Tube
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· 150°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V(Silicon Limited)	5.1	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	4.1	A
IDM	Pulsed Drain Current	41	A
PD @TC = 25°C	Power Dissipation	2.8
PD @TC = 25°C	Power Dissipation	1.0	W
	Linear Derating Factor	0.02	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS(Thermally limited)	Single Pulse Avalanche Energy	13	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	32	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ	Operating Junction and	-55 to + 150	°C
TSTG	Storage Temperature Range	-55 to + 150	°C

Description

The IRFL024Z is a kind of HEXFET P-channel power MOSFET which uses the lastest processing techniques to achieve extremely low on-resistance per silicon area. It can be used in automotive applications and a wide variety of other applications. It is available in the SOT-223 package.

There are some features of the IRFL024Z as follows. (1) advanced process technology; (2) ultra low on-resistance; (3) 150 operating temperature; (4) fast switching; (5) repetitive avalanche allowed up to tj(max).

The following is about its absolute maximum ratings of the IRFL024Z. (1): the maximum continuous drain current (ID) is 5.1 A when TA is 25 and is 4.1 A when TA is 70 ; (2): the maximum pulsed drain current (IDM) is 41 A; (3): power dissipation (PD) is 2.8 W when TA is 25; (4): gate-to-source voltage (VGS) is ±20 V; (5): the maximum avalanche current is 10 A; (6): the operating and storage temperature of the IRFL024Z is from -55 to 150 ; (7): linear derating factor is 0.02 W/ . Then is about its electrical characters at Tj is 25 . (1): gate threshold voltage is from 2.0 V to 4.0 V at VDS is 55 V and VGS is 0 V; (2): the typical input capacitance is 340 pF and is 68 pF for the output capacitance and is 39 pF for the reverse transfer capacitance when VGS is 0 V,VDS is 25 V and f is 1.0 MHz; (3): the typical turn-on delay time is 7.8 ns,the fall time is 23 ns,the rise time is 21 ns and the turn-off delay time is 30 ns at VDD is 28 V,ID is 3.1 A and RG is 53 .