IRFL214

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 2 Ohms
Continuous Drain Current : 0.79 A


Features:

• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


Specifications

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			VDS	250	V
Gate-Source Voltage			VGS	± 20
Continuous Drain Current	VGS at 10 V	TC = 25 °C	ID	0.79	A
		TC = 100 °C		0.50
Pulsed Drain Currenta			IDM	6.3
Linear Derating Factor				0.025	W/
Linear Derating Factor (PCB Mount)e				0.017	W/
Single Pulse Avalanche Energyb			EAS	50	mJ
Repetitive Avalanche Currenta			IAR	0.79	A
Repetitive Avalanche Energya			EAR	0.31	mJ
Maximum Power Dissipation (PCB Mount)e		TA = 25 °C	PD	3.1	W
Maximum Power Dissipation		TC = 25 °C		2.0	W

* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs of the IRFL214 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package of the IRFL214 is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.