Features: ·Avalanche Energy Rating· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light-weightSpecifications Parameter IRFN440 Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 8.0 A ID @ VGS = 1...
IRFN440: Features: ·Avalanche Energy Rating· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light-weightSpecifications Parameter IRFN4...
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Features: • HERMETICALLY SEALED SURFACE MOUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE ...
|
Parameter |
IRFN440 |
Units |
ID @ VGS = 10V, TC = 25°C |
Continuous Drain Current |
8.0 |
A |
ID @ VGS = 10V, TC = 100°C |
Continuous Drain Current |
5.0 | |
IDM |
Pulsed Drain Current |
32 | |
PD @ TC = 25°C |
Max. Power Dissipation |
125 |
W |
|
Linear Derating Factor |
1.0 |
W/K |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
700 |
mJ |
IAR |
Avalanche Current |
8.0 |
A |
EAR |
Repetitive Avalanche Energy |
12.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/ns |
TJ |
Operating Junction |
-55 to 150 |
oC |
|
Package Mounting Surface Temperature |
300 (for 5 sec.) | |
|
Weight |
2.6 (typical) |
9 |
HEXFET technology IRFN440 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
HEXFET transistors IRFN440 also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1)IRFN440 package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance.