IRF3205

MOSFET N-CH 55V 110A TO-220AB

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IRF3205 Picture
SeekIC No. : 004376443 Detail

IRF3205: MOSFET N-CH 55V 110A TO-220AB

floor Price/Ceiling Price

US $ 1.12~1.12 / Piece | Get Latest Price
Part Number:
IRF3205
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~250
  • Unit Price
  • $1.12
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated





Specifications

Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 110 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 80
IDM Pulsed Drain Current 390
PD @ TC =25 Power Dissipation 200 W
Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
IAR Avalanche Current 62 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)





Description

Power MOSFETs of the IRF3205 from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of the IRF3205 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.



The IRF3205 is designed as one kind of HEXFET power MOSFET that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Features of the IRF3205 are:(1)advanced process technology;(2)ultra low on-resistance;(3)dynamic dv/dt rating;(4)175°C operating temper-ature;(5)fast switching;(6)fully avalanche rated.

The absolute maximum ratings of the IRF3205 can be summarized as:(1)continuous drain current, VGS @ 10V Tc=25°C:110 A;(2)continuous drain current, VGS @ 10V Tc=100°C:80 A;(3)pulsed drain current:390 A;(4)power dissipation:200 W;(5)linear derating factor:1.3 W/°C;(6)gate-to-source voltage:±20 V;(7)avalanche current:62 A;(8)repetitive avalanche energy:20 mJ;(9)peak diode recovery dv/dt:5.0 V/ns;(10)operating junction and storage temperature range:-55°C to + 175°C;(11)soldering temperature, for 10 seconds:300 (1.6mm from case );(12)mounting torque, 6-32 or M3 srew:10 lbf•in (1.1N•m);(13)junction-to-case:0.75°C/W;(14)case-to-sink, flat, greased surface:0.50°C/W.

The electrical characteristics of the IRF3205 can be summarized as:(1)drain-to-source breakdown voltage:55 V;(2)breakdown voltage temp. coefficient: 0.057V/°C;(3)static drain-to-source on-resistance:8.0 m;(4)gate threshold voltage:2.0 to 4.0 V;(5)forward transconductance:44 S;(6)total gate charge: 146 nC;(7)gate-to-source charge:35 nC;(8)gate-to-drain ("Miller") charge:54 nC;(9)turn-on delay time:14 ns;(10)rise time:101 ns. If you want to know more information such as the electrical characteristics about the IRF3205, please download the datasheet in www.seekic.com or www.chinaicmart.com .






Parameters:

Technical/Catalog InformationIRF3205
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs8 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds 3247pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs146nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF3205
IRF3205



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