IRF3205

Power MOSFETs of the IRF3205 from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of the IRF3205 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The IRF3205 is designed as one kind of HEXFET power MOSFET that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Features of the IRF3205 are:(1)advanced process technology;(2)ultra low on-resistance;(3)dynamic dv/dt rating;(4)175°C operating temper-ature;(5)fast switching;(6)fully avalanche rated.

The absolute maximum ratings of the IRF3205 can be summarized as:(1)continuous drain current, VGS @ 10V Tc=25°C:110 A;(2)continuous drain current, VGS @ 10V Tc=100°C:80 A;(3)pulsed drain current:390 A;(4)power dissipation:200 W;(5)linear derating factor:1.3 W/°C;(6)gate-to-source voltage:±20 V;(7)avalanche current:62 A;(8)repetitive avalanche energy:20 mJ;(9)peak diode recovery dv/dt:5.0 V/ns;(10)operating junction and storage temperature range:-55°C to + 175°C;(11)soldering temperature, for 10 seconds:300 (1.6mm from case );(12)mounting torque, 6-32 or M3 srew:10 lbf•in (1.1N•m);(13)junction-to-case:0.75°C/W;(14)case-to-sink, flat, greased surface:0.50°C/W.

The electrical characteristics of the IRF3205 can be summarized as:(1)drain-to-source breakdown voltage:55 V;(2)breakdown voltage temp. coefficient: 0.057V/°C;(3)static drain-to-source on-resistance:8.0 m;(4)gate threshold voltage:2.0 to 4.0 V;(5)forward transconductance:44 S;(6)total gate charge: 146 nC;(7)gate-to-source charge:35 nC;(8)gate-to-drain ("Miller") charge:54 nC;(9)turn-on delay time:14 ns;(10)rise time:101 ns. If you want to know more information such as the electrical characteristics about the IRF3205, please download the datasheet in www.seekic.com or www.chinaicmart.com .