Features: Advanced Process Technology Ultra Low On-Resistance 175 Operating Temperature Fast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ VGS = 10V, TC = 25 tinuous Drain Current 175 A ID @ VGS = 10V, TC = 100 Continuous Drai...
IRF2805: Features: Advanced Process Technology Ultra Low On-Resistance 175 Operating Temperature Fast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID ...
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Parameter |
Max. |
Units | |
ID @ VGS = 10V, TC = 25 | tinuous Drain Current |
175 |
A |
ID @ VGS = 10V, TC = 100 | Continuous Drain Current |
120 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package limited) |
75 | |
IDM | Pulsed Drain Current |
700 | |
PD @ TC = 25°C | Max. Power Dissipation |
330 |
W |
Linear Derating Factor |
2.2 |
W/ | |
VGS | Gate-to-Source Voltage |
±20 |
V |
EAS | Single Pulse Avalanche Energy |
450 |
mJ |
EAS (6 sigma) | Single Pulse Avalanche Energy Tested Value |
1220 |
|
IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR | Repetitive Avalanche Energy |
mJ | |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw |
1.1 (10) |
g |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF2805 are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2805 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.