IRF3007LPbF

MOSFET N-CH 75V 62A TO-262

product image

IRF3007LPbF Picture
SeekIC No. : 004376440 Detail

IRF3007LPbF: MOSFET N-CH 75V 62A TO-262

floor Price/Ceiling Price

US $ .59~1.03 / Piece | Get Latest Price
Part Number:
IRF3007LPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $1.03
  • $.79
  • $.75
  • $.7
  • $.67
  • $.64
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax



Specifications

 
Parameter
Max.
Unit
ID @ TC= 25 Continuous Drain Current,VGS @ 10V
62
A
ID @ TC= 100 Continuous Drain Current,VGS @ 10V
44
A
IDM Pulsed Drain Current
320
A
PD @TC= 25 Power Dissipation
120
W
  Linear Derating Factor
0.8
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
290
mJ
EAS(6 sigma) Single Pulse Avalanche Energy Tested Value
946
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300(1.6mm from case )



Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007LPbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF3007LPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs12.6 mOhm @ 48A, 10V
Input Capacitance (Ciss) @ Vds 3270pF @ 25V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-262
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3007LPBF
IRF3007LPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - Board Mount
Audio Products
LED Products
Static Control, ESD, Clean Room Products
View more