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IRF322

Features: `2.8A and 3.3A, 350V and 400V`rDS(ON)= 1.8 and 2.5`Single Pulse Avalanche Energy Rated`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Carrier Device`Related Literature -TB334 Guidelines for Soldering Surface Moun...

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SeekIC No. : 004376447 Detail

IRF322: Features: `2.8A and 3.3A, 350V and 400V`rDS(ON)= 1.8 and 2.5`Single Pulse Avalanche Energy Rated`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Inp...

IRF322 Data Sheet

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Part Number:
IRF322
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

`2.8A and 3.3A, 350V and 400V
`rDS(ON) = 1.8 and 2.5
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Majority Carrier Device
`Related Literature
  -TB334  Guidelines for Soldering Surface Moun Components to PC Boards


Specifications

    IRF320 IRF321 IRF322 IRF323 UNITS
Drain to Source Voltage (Note 1) VDS 400 350 400 350 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 400 350 400 350 V
Continuous Drain Current ID 3.3 3.3 2.8 2.8 A
TC = 100
 ID 2.1 2.1 1.8 1.8 A
Pulsed Drain Current (Note 3) IDM 13 13 11 11 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 50 50 50 50 W
Linear Derating Factor   0.4 0.4 0.4 0.4 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 190 190 190 190 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, see TB334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRF322 are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types of IRF322  can be operated directly from integrated circuits.

Formerly developmental type TA17404.




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