FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Power - Max: 330W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 160A
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
Input Capacitance (Ciss) @ Vds: 6930pF @ 25V
Features: `Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to TjmaxSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
320 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V (See Fig. 9) |
230 |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package Limited) |
160 |
| IDM |
Pulsed Drain Current |
1360 |
| PD @ TC = 25 |
Maximum Power Dissipation |
330 |
A |
| |
Linear Derating Factor |
2.2 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy (Thermally Limited) |
630 |
mJ |
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
1050 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF2804S-7P are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2804S-7P combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF2804S-7P Data Sheet
