IRF2807SPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 82 A
Resistance Drain-Source RDS (on) : 13 m Ohms


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS @ 10V	82	A
ID @ TC =100	Continuous Drain Current VGS @ 10V	58
IDM	Pulsed Drain Current	280
PD @ TC = 25	Max. Power Dissipation	230	W
	Linear Derating actor	1.5	W/
VGS	Gate-to-Source Voltage	±20	V
IAR	Avalanche Current	43	A
EAR	Repetitive Avalanche Energy	23	mJ
TJ	Operating Junction	-55 to 175
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10lb`in (1.1N`m)

Description

Advanced HEXFET^® Power MOSFETs of the IRF2807SPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF2807SPbF) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRF2807SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	82A
Rds On (Max) @ Id, Vgs	13 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	3820pF @ 25V
Power - Max	230W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	160nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF2807SPBF IRF2807SPBF