IRF3205ZL

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 170W
Input Capacitance (Ciss) @ Vds: 3450pF @ 25V
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax




Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	110	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	78
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	440
PD @ TC = 25	Power Dissipation	170	W
	Linear Derating Factor	1.1	W/
VGS	Gate-to-Source Voltage	±20	V
EAS(Thermally limited)	Single Pulse Avalanche Energy	180	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	250
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRF3205ZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF3205ZL are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.