Position: Home  > All Categories> Integrated Circuits (ICs) > IRF330

IRF330

Features: ·Repetitive Avalanche Ratings·Dynamic dv/dt Rating·Hermetically Sealed·Simple Drive Requirements·Ease of ParallelingSpecifications Parameter Max. Units ID @ VGS =0V TC =25 Continuous Drain Current 5.5 A ID @ VGS =0V TC =100 Continuous Drain Current 3.5 IDM Pulsed ...

product image

IRF330 Picture
See larger image
SeekIC No. : 004376449 Detail

IRF330: Features: ·Repetitive Avalanche Ratings·Dynamic dv/dt Rating·Hermetically Sealed·Simple Drive Requirements·Ease of ParallelingSpecifications Parameter Max. Units ID @ VGS =0V TC =25 Con...

IRF330 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF330
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Repetitive Avalanche Ratings
·Dynamic dv/dt Rating
·Hermetically Sealed
·Simple Drive Requirements
·Ease of Paralleling


Specifications

  Parameter Max. Units
ID @ VGS =0V TC =25 Continuous Drain Current 5.5 A
ID @ VGS =0V TC =100 Continuous Drain Current 3.5
IDM Pulsed Drain Current 22
PD @ TC =100 Max. Power Dissipation 75 W
  Linear Derating Factor 0.60 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 1.7 mJ
IAR Avalanche Current 5.5 A
EAR Repetitive Avalanche Energy - mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to + 150
  Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
  Weight 11.5(typical) g



Description

The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest ''State of the Art!± design achieves: very low on-state resi tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

HEXFET are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Crystals and Oscillators
WT325BI0030.000000
2SB49
Optical Inspection Equipment
AA924
A21K4B
View more