IRF3000

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 1.6A
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Drain to Source Voltage (Vdss): 300V
Input Capacitance (Ciss) @ Vds: 730pF @ 25V
Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V


Features:

·Low Gate to Drain Charge to ReduceSwitching Losses
·Fully Characterized Capacitance Including Effective COSS  to Simplify Design, (See App. Note AN1001)
·Fully Characterized Avalanche Voltage and Current


Application

High frequency DC-DC converters


Pinout




Specifications

	Parameter	Max.	Units
ID @ TA =25	Continuous Drain Current,VGS @ 10V	1.6	A
ID @ TA =70	Continuous Drain Current,VGS @ 10V	1.3
IDM	Pulsed Drain Current	13
PD @ TA =25	Power Dissipation	2.5	W
	Linear Derating Factor	0.02	W/
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	8.9	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)