IRF240

Features:

·18A, 200V
·rDS(ON)= 0.180
·Single Pulse Avalanche Energy Rated
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Related Literature
   -TB334,  Guidelines for Soldering Surface Moun Components to PC Boards


Specifications

		IRF240	UNITS
Drain to Source Voltage (Note 1)	VDS	200	V
Drain to Gate Voltage (RGS = 20k)(Note 1)	VDGR	200	V
Continuous Drain Current	ID	18	A
TC = 100	ID	11	A
Pulsed Drain Current (Note 3)	IDM	72	A
Gate to Source Voltage.	VGS	±20	V
Maximum Power Dissipation	PD	125	W
Linear Derating Factor		1.0	/W
Single Pulse Avalanche Energy Rating (Note 4)	EAS	580	mJ
Operating and Storage Temperature	TJ , TSTG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s	TL	300
Package Body for 10s, see TB334	Tpkg	260

Description

ThisN-Channelenhancementmodesilicongatepowereld effect transistor of the IRF240 is an advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energyinthebreakdownavalanchemodeofoperation.Allof these power MOSFETs of the IRF240 are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF240.