IRF2804

MOSFET N-CH 40V 75A TO-220AB

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IRF2804 Picture
SeekIC No. : 003432726 Detail

IRF2804: MOSFET N-CH 40V 75A TO-220AB

floor Price/Ceiling Price

US $ 2.28~2.28 / Piece | Get Latest Price
Part Number:
IRF2804
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~150
  • Unit Price
  • $2.28
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 75A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 240nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6450pF @ 25V
Power - Max: 330W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 240nC @ 10V
Power - Max: 330W
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 6450pF @ 25V
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 280 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (See Fig. 9) 200
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 1080
ID @ TC = 25 Maximum Power Dissipation 330 A
  Linear Derating Factor 2.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 670 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 1160
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature of the IRF2804, fast switching speed and improved repetitive avalanche rating . These features of the IRF2804 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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