IRF1704

MOSFET N-CH 40V 170A TO-220AB

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IRF1704 Picture
SeekIC No. : 003433383 Detail

IRF1704: MOSFET N-CH 40V 170A TO-220AB

floor Price/Ceiling Price

Part Number:
IRF1704
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 170A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 260nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6950pF @ 25V
Power - Max: 230W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Power - Max: 230W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 170A
Input Capacitance (Ciss) @ Vds: 6950pF @ 25V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V


Features:

`200 Operaing TemperatureAdvanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`Fast Switching
`Repetitive Avalanche Allowed up to Tj Max
`Automotive Qualified (Q101)



Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 170 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 120
IDM Pulsed Drain Current 680
PD @ TC =100 Power Dissipation 230 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 670 mJ
IAR Avalanche Current 100 A
EAR Repetitive Avalanche Energy 23 mJ
dv/dt Peak Diode Recovery dv/dt 1.9 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 200
TLEAD Lead Temperature  
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)  



Description

Specifically designed for Automotive applications, this  HEXFET  power MOSFET  of the IRF1704 has   a  200  max  operating temperature with a Stripe Plana design that utilizes the latest processing techniques to achieve extremely  low on-resistance  per  silicon  area. Additional features of this HEXFET  power MOSFET are fast  switching  speed  and improved repetitive  avalanche rating.

The  continuing technology leadership of Internationl Rectifier provides 200 operating temperature in a plastic package. At high ambient temperatures of the IRF1704,  the IRF1704  can  carry up to  20% more current than similar  175 Tj max  device in the  same package outline. This makes this part ideal for existing  and emerging  under-the-hood automotive applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and  wide variety of other applications.




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