IRF3205ZSPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms


Features:

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	110	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	78
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	440
PD @TC= 25	Power Dissipation	170	W
	Linear Derating Factor	1.1	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	180	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	250
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF3205ZSPbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications of IRF3205ZSPbF and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF3205ZSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 66A, 10V
Input Capacitance (Ciss) @ Vds	3450pF @ 25V
Power - Max	170W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	D²Pak, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3205ZSPBF IRF3205ZSPBF