IRF3205ZSPBF

MOSFET

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IRF3205ZSPBF Picture
SeekIC No. : 00153384 Detail

IRF3205ZSPBF: MOSFET

floor Price/Ceiling Price

US $ .76~1.64 / Piece | Get Latest Price
Part Number:
IRF3205ZSPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.64
  • $.97
  • $.77
  • $.76
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms


Features:

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free



Specifications

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
110
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V
78
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited)
75
IDM Pulsed Drain Current
440
PD @TC= 25 Power Dissipation
170
W
  Linear Derating Factor
1.1
W/
VGS Gate-to-Source Voltage
± 20
V
EAS (Thermally limited) Single Pulse Avalanche Energy
180
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
250
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)



Description

Specifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF3205ZSPbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications of IRF3205ZSPbF and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF3205ZSPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 66A, 10V
Input Capacitance (Ciss) @ Vds 3450pF @ 25V
Power - Max170W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3205ZSPBF
IRF3205ZSPBF



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