Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 260 A ID @ TC = 100 Continuous D...
IRF2903ZS: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ T...
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Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 260 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 180 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
IDM | Pulsed Drain Current | 1020 | |
ID @ TC = 25 | Power Dissipation | 290 | A |
Linear Derating Factor | 2.0 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS (Thermally limited | Single Pulse Avalanche Energy | 290 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 820 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRF2903ZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2903ZS combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.