IRF3315

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 27A
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Manufacturer: International Rectifier
Power - Max: 136W
Rds On (Max) @ Id, Vgs: 70 mOhm @ 12A, 10V


Features:

`Advanced Process Technology
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	27	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	19
IDM	Pulsed Drain Current	108
PD @ TC =25	Power Dissipation	136	W
	Linear Derating Factor	0.91	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	350	mJ
IAR	Avalanche Current	12	A
EAR	Repetitive Avalanche Energy	13.6	mJ
dv/dt	Peak Diode Recovery dv/dt	2.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbf.in (1.1 N.m)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. IRF3315 benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO- 220 contribute to IRF3315 wide acceptance throughout the industry.