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IRF237

Features: • 8.1A and 6.5A, 275V and 250V• rDS(ON) = 0.45W and 0.68W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• 275V, 250V DC Rated - 120V...

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SeekIC No. : 004376413 Detail

IRF237: Features: • 8.1A and 6.5A, 275V and 250V• rDS(ON) = 0.45W and 0.68W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds&...

IRF237 Data Sheet

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Part Number:
IRF237
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

    IRF234

IRF235

 IRF236 IRF237 UNITS
Drain to Source Voltage (Note 1) VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 250 250 275 275 V
Continuous Drain Current ID 8.1 6.5 8.1 6.5 A
TC = 100
 ID 5.1 4.1 5.1 4.1 A
Pulsed Drain Current (Note 3) IDM 32 26 32 26 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 75 75 75 75 W
Linear Derating Factor   0.6

0.6

 0.6 0.6 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 180 180 180 180 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRF237 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF237.




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