IRF3305PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 8 m Ohms


Features:






Specifications






Description

      IRF3305PbF is a kind of automotive MOSFET.Here you can get some information about the features.First is that IRF3305PbF is designed to support linear Gate Drive Applications.The second is 175 operating temperature.Then is low thermal resistance junction-case.Next is rugged process technology and design.The fifth one is fully avalanche rated.The last one is lead-free.
      The following of IRF3305PbF is about the absolute maximum ratings.The maximum I_D (continuous drain current) is 140 A at T_C=25,V_GS=10 V (silicon limited),99 A at T_C=100,V_GS=10 V and 75 A at T_C=25,V_GS=10 V (package limited).The maximum I_DM (Pulsed drain current) is 560 A.The maximum V_GS (gate-to-source voltage) is ±20 V.The maximum E_{AS(thermally limited)} (single pulse avalanche energy) is 470 mJ and the maximum E_AS(tested) (single pulse avalanche energy tested value)is 860 mJ.The maximum P_D (power dissipation) is 330 W at T_C=25.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +175.The soldering temperature for 10 seconds is 300.Then is about the .The thermal resistancemaximum R_JC (Junction-to-Case-IGBT) is 0.45/W.The maximum R_JA (Junction-to-Ambient ) is 62/W.The typical R_CS (case-to-sink,flat,greased surface) is 0.50/W.
      There are the electrical characteristics of IRF3305PbF at T_J=25 to follow.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is 55 V at V_GS=0 V,I_D=250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is 0.055 V/ at reference to 25 and I_D=1 mA.The minimum V_GS(th) (gate threshold voltage) is 2.0 V and the maximum is 4.0 V at V_DS=V_GS,I_D=250A.The maximum I_DSS (drain to source leakage current) is 25A at V_DS=55 V,V_GS=0 V and is 250A at V_DS=55 V,V_GS=0 V,T_J=125.The maximum (I_GSS) (gate-to-source forward current) is 200 nA at V_GS=20 V.The maximum (I_GSS) (gate-to-source reverse current) is -200 nA at V_GS=-20 V.

Parameters:

Technical/Catalog Information	IRF3305PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	8 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	3650pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3305PBF IRF3305PBF