IRF3415PBF

MOSFET MOSFT 150V 43A 42mOhm 133.3nC

product image

IRF3415PBF Picture
SeekIC No. : 00146521 Detail

IRF3415PBF: MOSFET MOSFT 150V 43A 42mOhm 133.3nC

floor Price/Ceiling Price

US $ 1.02~2.09 / Piece | Get Latest Price
Part Number:
IRF3415PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.09
  • $1.43
  • $1.06
  • $1.02
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 43 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 43 A


Pinout

  Connection Diagram


Description

The IRF3415PBF is one member of the IRF3415 family which is designed as the HEXFET Power MOSFET that has some points of features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175 operating temperature; (4)fast switching; (5)fully avalanche rated; (6)lead-free.

The absolute maximum ratings of the IRF3415PBF can be summarized as:(1)Continuous Drain Current, VGS @ 10V (TC = 25°C): 43 A;(2)Continuous Drain Current, VGS @ 10V (TC = 100°C): 30 A;(3)Pulsed Drain Current: 150 A;(4)Power Dissipation: 200 W;(5)Linear Derating Factor: 1.30 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Single Pulse Avalanche Energy: 590 mJ;(8)Avalanche Current: 22 A;(9)Repetitive Avalanche Energy: 20 mJ;(10)Peak Diode Recovery dv/dt: 5.0 V/ns.

The electrical characteristics of this device can be summarized as:(1)Drain-to-Source Breakdown Voltage: 150 V;(2)Breakdown Voltage Temp. Coefficient: 0.17 V/°C;(3)Static Drain-to-Source On-Resistance: 0.042 ;(4)Gate Threshold Voltage: 2.0 to 4.0 V;(5)Forward Transconductance: 19 s;(6)Total Gate Charge: 200 nC;(7)Reverse Transfer Capacitance: 340 pF. If you want to know more information about the IRF3415PBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationIRF3415PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs42 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3415PBF
IRF3415PBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
RF and RFID
Potentiometers, Variable Resistors
Soldering, Desoldering, Rework Products
View more