IRF2805S

Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxApplication·Climate Control·ABS·Electronic Braking·Windshield WipersSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current...

product image

IRF2805S Picture
SeekIC No. : 004376427 Detail

IRF2805S: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxApplication·Climate Control·ABS·Electronic Braking·Win...

floor Price/Ceiling Price

Part Number:
IRF2805S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax



Application

·Climate Control
·ABS
·Electronic Braking
·Windshield Wipers



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 135 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 96
IDM Pulsed Drain Current 700
PD @ TC = 25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 380 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 1220
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques of the IRF2805S to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2805S combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Circuit Protection
Power Supplies - External/Internal (Off-Board)
Prototyping Products
DE1
Semiconductor Modules
View more