Features: ` Advanced Process Technology` Ultra Low On-Resistance` 175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 280 A ID @ TC = 100 Continu...
IRF2804S: Features: ` Advanced Process Technology` Ultra Low On-Resistance` 175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units I...
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Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 280 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 200 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
IDM | Pulsed Drain Current | 1080 | |
ID @ TC = 25 | Maximum Power Dissipation | 330 | A |
Linear Derating Factor | 2.2 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy (Thermally Limited) | 670 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 1160 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF2804S are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.