Features: · HERMETICALLY SEALED SURFACE MOUNT PACKAGE· SMALL FOOTPRINT - C EFFICIENT USE O PCB SPACE.· SIMPLE DRIVE REQUIREMENTS· LIGHTWEIGHT· HIGH PACKING DENSITIESSpecifications VGS Gate - Source Voltag ±20 ID Continuous Drain Current(VGS = 0 , Tcase = 25 22A ID Continuous Drain ...
IRF250SMD: Features: · HERMETICALLY SEALED SURFACE MOUNT PACKAGE· SMALL FOOTPRINT - C EFFICIENT USE O PCB SPACE.· SIMPLE DRIVE REQUIREMENTS· LIGHTWEIGHT· HIGH PACKING DENSITIESSpecifications VGS Gate - S...
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VGS | Gate - Source Voltag | ±20 |
ID | Continuous Drain Current(VGS = 0 , Tcase = 25 |
22A |
ID | Continuous Drain Current(VGS = 0 , Tcase = 100 | 14A |
IDM | PulsedDrain Current 1 | 88A |
PD | Power Dissipation @ Tcase = 25 |
100W |
Linear Derating Factor | 0.8W/ | |
EAS | Single Pulse Avalanche Energy 2 | 500mJ |
dv/dt | Peak Diode Recovery 3 | 5.0V/ns |
TJ , Tstg | Operating and Storage Temperature Range | -55 to 150 |
TL | Package Mounting Surface Temperature (for5 sec) | 300 |
RJC | Thermal Resistance Junction to Case | 1.25/W |
RJ-CPC | Thermal Resistance Junction to PCB (Typical) | 4C/W |