Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxApplication·Climate Control·ABS·Electronic Braking·Windshield WipersSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current...
IRF2805L: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxApplication·Climate Control·ABS·Electronic Braking·Win...
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Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 135 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 96 | |
IDM | Pulsed Drain Current | 700 | |
PD @ TC = 25 | Power Dissipation | 200 | W |
Linear Derating Factor | 1.3 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 380 | mJ |
EAS (6 sigma) | Single Pulse Avalanche Energy Tested Value | 1220 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
dv/dt | Peak Diode Recovery dv/dt | 2.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device of the IRF2805L for use in Automotive applications and a wide variety of other applications.