IRF3205SPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 8 m Ohms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	110	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	80
IDM	Pulsed Drain Current	390
PD @ TC = 25	Max. Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
IAR	Avalanche Current	62	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds (1.6mm from case)	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF3205SPbF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of IRF3205SPbF low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF3205L) is available for low-profile applications.

Parameters:

Technical/Catalog Information	IRF3205SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	110A
Rds On (Max) @ Id, Vgs	8 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds	3247pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	146nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3205SPBF IRF3205SPBF