Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Gate-Source Breakdown Voltage
: 12 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Drain-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Resistance Drain-Source RDS (on)
: 85 mOhms
Continuous Drain Current
: 4.2 A
Features: ·Ultra Low On-Resistance
· N-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 4.5V |
4.2 |
A |
| ID @ TA= 70 |
Continuous Drain Current, VGS @ 4.5V |
3.4 |
| IDM |
Pulsed Drain Current |
17 |
| PD @TA = 25 |
Power Dissipation |
2.5 |
W |
| PD @TA = 70 |
wer Dissipation |
1.6 |
| |
Linear Derating Factor |
0.22 |
mW/ |
| VGS |
Gate-to-Source Voltage |
± 12 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionThese N-Channel HEXFET® power MOSFETs of the IRF1902PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The IRF1902PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices of the IRF1902PbF can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques
Parameters: | Technical/Catalog Information | IRF1902PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.2A |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 310pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1902PBF
IRF1902PBF
|
IRF1902PBF Data Sheet
