IRF1607PBF

MOSFET MOSFT 75V 142A 7.5mOhm 210nC

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SeekIC No. : 00146294 Detail

IRF1607PBF: MOSFET MOSFT 75V 142A 7.5mOhm 210nC

floor Price/Ceiling Price

US $ 1.51~2.03 / Piece | Get Latest Price
Part Number:
IRF1607PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.03
  • $1.82
  • $1.61
  • $1.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 142 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 142 A


Features:

 ·42 Volts Automotive Electrical Systems
 ·Electrical Power Steering (EPS)
 ·Integrated Starter Alternator
 ·Lead-Free



Specifications

Characteristics
PARAMETER
Max.
Unit
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
142
A
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
100
A
Pulsed Drain Current
IDM
570
A
Power Dissipation
PD @TC = 25°C
380
W
Linear Derating Factor
2.5
mW/
Gate-to-Source Voltage
VGS
± 20
V
Single Pulse Avalanche Energy
EAS
1250
mJ
 
IAR
See Fig.12a,12b,15,16
A
 
EAR
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
V/ns
Junction and Storage Temperature Range
Tj,Tstg
-55~175



Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1607PbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1607PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1607PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C142A
Rds On (Max) @ Id, Vgs7.5 mOhm @ 85A, 10V
Input Capacitance (Ciss) @ Vds 7750pF @ 25V
Power - Max380W
PackagingBulk
Gate Charge (Qg) @ Vgs320nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1607PBF
IRF1607PBF



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