MOSFET MOSFT 75V 142A 7.5mOhm 210nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 142 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Characteristics |
PARAMETER |
Max. |
Unit |
Continuous Drain Current, VGS @ 10V |
ID @ TA = 25°C |
142 |
A |
Continuous Drain Current, VGS @ 10V |
ID @ TA = 70°C |
100 |
A |
Pulsed Drain Current |
IDM |
570 |
A |
Power Dissipation |
PD @TC = 25°C |
380 |
W |
Linear Derating Factor |
2.5 |
mW/ | |
Gate-to-Source Voltage |
VGS |
± 20 |
V |
Single Pulse Avalanche Energy |
EAS |
1250 |
mJ |
IAR |
See Fig.12a,12b,15,16 |
A | |
EAR |
mJ | ||
Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
V/ns |
Junction and Storage Temperature Range |
Tj,Tstg |
-55~175 |
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1607PbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1607PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRF1607PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 142A |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 85A, 10V |
Input Capacitance (Ciss) @ Vds | 7750pF @ 25V |
Power - Max | 380W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 320nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF1607PBF IRF1607PBF |