Position: Home  > All Categories> Integrated Circuits (ICs) > IRF3415

IRF3415

MOSFET N-CH 150V 43A TO-220AB

product image

IRF3415 Picture
See larger image
SeekIC No. : 004376451 Detail

IRF3415: MOSFET N-CH 150V 43A TO-220AB

IRF3415 Data Sheet

floor Price/Ceiling Price

US $ 1.51~1.51 / Piece | Get Latest Price
Part Number:
IRF3415
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~200
  • Unit Price
  • $1.51
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 43 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 30
IDM Pulsed Drain Current 150
PD @ TC =25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 590 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1 N.m)  



Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. IRF3415 benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF3415
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs42 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF3415
IRF3415



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Undefined Category
VI-B63-IU
X27 589
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Cables, Wires
821-0814-a
415-0100-150
Memory Cards, Modules
WT32
VTL5C7
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
View more