IRF2907ZL

Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 170 A ID @ TC = 100 Continuous D...

product image

IRF2907ZL Picture
SeekIC No. : 004376435 Detail

IRF2907ZL: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ T...

floor Price/Ceiling Price

Part Number:
IRF2907ZL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax





Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 170 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (See Fig. 9) 120
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 680
PD @ TC = 25 Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 300 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 690
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)





Description

Specifically designed for Automotive applications of the IRF2907ZL, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2907ZL combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Soldering, Desoldering, Rework Products
Boxes, Enclosures, Racks
Crystals and Oscillators
Connectors, Interconnects
Semiconductor Modules
View more