Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 170 A ID @ TC = 100 Continuous D...
IRF2907ZL: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ T...
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Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 170 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 120 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
IDM | Pulsed Drain Current | 680 | |
PD @ TC = 25 | Maximum Power Dissipation | 330 | W |
Linear Derating Factor | 2.2 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy (Thermally Limited) | 300 | mJ |
EAS (tested) | Single Pulse Avalanche Energy Tested Value | 690 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Specifically designed for Automotive applications of the IRF2907ZL, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2907ZL combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.