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IRF245

Features: `14A and 13A, 275V and 250V`rDS(ON)= 0.28 and 0.34`Single Pulse Avalanche Energy Rated`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`275V, 250V DC Rated - 120V AC Line System Operation`Related Literature -TB334 Guideline...

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SeekIC No. : 004376418 Detail

IRF245: Features: `14A and 13A, 275V and 250V`rDS(ON)= 0.28 and 0.34`Single Pulse Avalanche Energy Rated`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Inp...

IRF245 Data Sheet

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Part Number:
IRF245
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

`14A and 13A, 275V and 250V
`rDS(ON)= 0.28 and 0.34
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`275V, 250V DC Rated - 120V AC Line System Operation
`Related Literature
   -TB334  Guidelines for Soldering Surface Mou Components to PC Boards


Specifications

    IRF244 IRF245 IRF246 IRF247 UNITS
Drain to Source Voltage (Note 1) VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 250 250 275 275 V
Continuous Drain Current ID 14 13 14 13 A
TC = 100
 ID 8.8 8.0 8.8 8.0 A
Pulsed Drain Current (Note 3) IDM 56 52 56 52 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 125 125 125 125 W
Linear Derating Factor   1.0 1.0 1.0 1.0 /W
Single Pulse Avalanche Energy Rating (Note 4) EAS 550 550 550 550 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, see TB334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRF245 are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF245.




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