IRF3205S

The IRF3205S is a HEXFET power MOSFET.Advanced HEXFET Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRF3205S are:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated.The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The absolute maximum ratings of the IRF3205S can be summarized as:(1)pulsed drain current :390V;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175 ;(4)power dissipation:200W;(5)avalanche current:62A.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. IRF3205S benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF3205S provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.

The D2Pak is suitable for high current applications because of IRF3205S low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.