Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 75 V
Continuous Drain Current
: 80 A
Gate-Source Breakdown Voltage
: 20 V
Resistance Drain-Source RDS (on)
: 12.6 m Ohms
Features: · Ultra Low On-Resistance
·175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Automotive [Q101] QualifiedApplication· 42 Volts Automotive Electrical Systems
·Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Silicon limited) |
80 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V (See Fig.9) |
56 |
|
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package limited) |
75 |
|
IDM |
Pulsed Drain Current |
320 |
|
PD @TC = 25 |
Power Dissipation |
200 |
W |
|
|
Linear Derating Factor |
1.3 |
W/ |
|
VGS |
Gate-to-Source Voltage |
± 20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
280 |
mJ |
|
EAS (6 sigma) |
Single Pulse Avalanche Energy Tested Value |
946 |
|
IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
|
EAR |
Repetitive Avalanche Energy |
mJ |
|
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
|
Mounting Torque, 6-32 or M3 screw |
1.1 (10) |
N•m (lbf•in) |
DescriptionSpecifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007PbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design of the IRF3007PbF an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF3007PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 12.6 mOhm @ 48A, 10V |
| Input Capacitance (Ciss) @ Vds | 3270pF @ 25V |
| Power - Max | 200W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3007PBF
IRF3007PBF
|
IRF3007PBF Data Sheet
