IRF1607

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 75V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 7750pF @ 25V
Power - Max: 380W
Current - Continuous Drain (Id) @ 25° C: 142A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V
Gate Charge (Qg) @ Vgs: 320nC @ 10V


Features:

`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Automotive [Q101] Qualified




Application

·42 Volts Automotive Electrical Systems
·Electrical Power Steering (EPS)
·Integrated Starter Alternator




Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	142	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	100
IDM	Pulsed Drain Current	570
PD @ TC =25	Power Dissipation	380	W
	Linear Derating Factor	2.5	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	1250	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	5.2	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbf.in (1.1 N.m)

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175!a junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1607 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.