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Vendor:Other Category:Other
The HHBA-5418/20 are Agilent's low profile, 2 Gb/s, dual-port PCI-X to Fibre Channel Adapters for high performance storage area networks and clustering environments.These HHBA-5418/20 feature two independent fibre chann...
Vendor:Other Category:Other
The HHBA-5418/20 are Agilent's low profile, 2 Gb/s, dual-port PCI-X to Fibre Channel Adapters for high performance storage area networks and clustering environments.These HHBA-5418/20 feature two independent fibre chan...
Vendor:Other Category:Other
Agilent's HHBA-5218 and HHBA-5219 are low profile, 2 Gb/s, 64-bit, 66 MHz PCI to Fibre Channel Adapters for enterprise Storage Area Network (SAN) applications. The low profile Fibre Channel Adapters provide auto-speed ne...
Vendor:Other Category:Other
Agilent's HHBA-5218 and HHBA-5219 are low profile, 2 Gb/s, 64-bit, 66 MHz PCI to Fibre Channel Adapters for enterprise Storage Area Network (SAN) applications. The low profile Fibre Channel Adapters provide auto-speed ne...
Vendor:Other Category:Other
The HHBA-5101 is a 64-bit PCI-to-Fibre Channel Adapter for mass storage applications that require FC-AL or Fabric, Class 3 and SCSI upper layer protocol handling. At the heart of these is the HPFC-5100 Tachyon TL Fibre C...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
HH-/HHS-109 3 db Hybrids are ideal for dividing a signal into two signals of equal amplitude and a constant 90° or 180° phase diffeential and for Quadrature combining or performing summation/differential combining.
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CH 600V 14A TO-220ABThe HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS devices have...
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CH 600V 14A TO-220AB
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 34A TO220AB
Pack:TO-220 D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 34A TO220AB
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. Th...
Mfg:F Pack:TO-220 D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 21A TO-220ABThe HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP5N120BN and HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. Th...
Vendor:Other Category:Other
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS devices h...
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTD3N60C3S and the HGTP3N60C3 devices have the high input impedance ...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 17A TO220AB
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 17A TO220AB
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs.HGTP2N120CND and HGT1S2N120CNDS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFET...
Mfg:TO-220 Pack:7850 D/C:FAIRCHIL Vendor:Other Category:Other
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine ...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. HGTP2N120BND and HGT1S2N120BNDS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSF...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine ...
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGTP20N60C3R family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGTP20N60C3R devices demonstrate RUGGED...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGTP20N60C3 family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP20N60C3 have the high input impedance of a MOSFET and the low on-state conduc...
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a ...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 70A TO220ABThe HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state co...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGTP20N36G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP20N36G3VL include an active voltage cla...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGTP20N35G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP20N35G3VL include an active voltage cla...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transisto...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors...
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The HGTP1N120BND and HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. ...
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. Thi...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTG15N120C3, HGTP15N120C3, HGT1S15N120C...
Mfg:FAIRCHILD/INTERSIL Pack:TO Vendor:Other Category:Other
This HGTP14N41G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N41G3VL include an active voltage cla...
Mfg:FAIRCHILD Pack:02+ D/C:TO-220 Vendor:Other Category:Other
This HGTP14N40F3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N40F3VL include an active voltage cl...
Vendor:Other Category:Other
This HGTP14N37G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N37G3VL include an active voltage cla...
Mfg:FSC Pack:TO-220 D/C:03+ Vendor:Other Category:Other
This HGTP14N36G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N36G3VLinclude an active voltage clam...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP12N60D1 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss o...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT SMPS N-CH 600V 24A TO-220ABThis family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The HGTP12N60C3D has the high input impedance of a MOSFET and the low on-state conduction loss of a bi...
Mfg:FA Pack:TO-220AB D/C:07+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT SMPS N-CH 600V 24A TO-220ABThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60C3 and HGT1S12N60C3S devices have the high input impedance o...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These HGTP12N60B3D devices have the high input impedance of a MOSFET and the low on-state conduction l...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60B3 and HGT1S12N60B3S have the high input impedance of a MOSFE...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 54A TO220AB
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 54A TO220ABThe HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A have the hi...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are new members of the MOS gated high voltage switching IGBT family. IGBTs comb...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP10N50F1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTP10N50F1D has the high input impedance of a MOSFET and the low on-state conduction...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP10N40F1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTP10N40F1D has the high input impedance of a MOSFET and the low on-state conduction...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 35A TO-220ABThe HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combi...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Mfg:INTERSIL Pack:TO-218 D/C:07+ Vendor:Other Category:Other
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regula...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-di...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 34A TO247
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar...
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 21A TO-247The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss ...
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH UFS 600V 70A TO-247The HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. The device has the high input impedance of aMOSFET and the low on-state conduction loss of a bipo...
Mfg:intersil Pack:03+ D/C:247 Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 75A TO247The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of ...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG34N100E2 has the high input impedance of a MOSFET and the low on-state conduction loss...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG32N60E2 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. HGTG32N60E2 has the high input impedance of a MOSFET and the low on-state conduction loss ...
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH UFS 600V 30A TO-247The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a ...
Pack:2 D/C:TO247 Vendor:Other Category:Other
The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a b...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH UFS 600V 30A TO-247
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CHAN 600V 60A TO-247The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a ...
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 60A TO-247The HGTG30N60A4D is a MOS gated high voltageswitching devices combining the best features of MOSFETsand bipolar transistors. This device has the high inputimpedance of a MOSFET and the low on-state conductionloss of a bi...
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 75A TO247The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a ...
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a ...
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