HGTG30N60B3D

IGBT Transistors 600V IGBT UFS N-Channel

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HGTG30N60B3D: IGBT Transistors 600V IGBT UFS N-Channel

floor Price/Ceiling Price

US $ 2.46~3.37 / Piece | Get Latest Price
Part Number:
HGTG30N60B3D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~163
  • 163~250
  • 250~500
  • 500~1000
  • Unit Price
  • $3.37
  • $3.1
  • $2.82
  • $2.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.45 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 60 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 208 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.45 V
Continuous Collector Current at 25 C : 60 A
Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 208 W
Package / Case : TO-247-3


Features:

• 60A, 600V, TC =25oC
• 600V Switching SOA Capability
• TypicalFallTime.................90nsatTJ =150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode



Specifications

CollectortoEmitterVoltage......................................................BVCES
Collector Current Continuous
At TC =25oC.............................................................................IC25
At TC =110oC..........................................................................IC110
Average Diode Forward Current at 11............................... IEC(AVG)
CollectorCurrentPulsed(Note1) ................................................. ICM
GatetoEmitterVoltageContinuous.............................................VGES
GatetoEmitterVoltagePulsed................................................... VGEM
Switching Safe Operating Area at TJ =150oC(Figure2)............ SSOA
Power Dissipation Total at TC =25oC...........................................PD
Power Dissipation Derating TC >25oC..........................................
OperatingandStorageJunctionTemperatureRange.................TJ,TSTG
MaximumLeadTemperatureforSoldering........................................ TL
Short Circuit Withstand Time (Note 2) at VGE =12V.....................tSC
Short Circuit Withstand Time (Note 2) at VGE =10V.....................tSC



Parameters:

Technical/Catalog InformationHGTG30N60B3D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Power - Max208W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTG30N60B3D
HGTG30N60B3D



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