IGBT Transistors 600V IGBT UFS N-Channel
HGTG30N60B3D: IGBT Transistors 600V IGBT UFS N-Channel
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.45 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 208 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Technical/Catalog Information | HGTG30N60B3D |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
Power - Max | 208W |
Mounting Type | Through Hole |
Package / Case | TO-247 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTG30N60B3D HGTG30N60B3D |