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HGTG10N120BND_Q

IGBT Transistors 35A 1200V N-Ch

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SeekIC No. : 00144001 Detail

HGTG10N120BND_Q: IGBT Transistors 35A 1200V N-Ch

HGTG10N120BND_Q Data Sheet

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Part Number:
HGTG10N120BND_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

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Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.45 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 35 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 298 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Power Dissipation : 298 W
Collector-Emitter Saturation Voltage : 2.45 V
Continuous Collector Current at 25 C : 35 A


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