Features: • 6.2A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150• Short Circuit Rating• Low Conduction Loss• Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www....
HGTP1N120CND: Features: • 6.2A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150• Short Circuit Rating• Low C...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTP1N120CND and the HGT1S1N120CNDS has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The HGTP1N120CND and the HGT1S1N120CNDS IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
The HGTP1N120CND and the HGT1S1N120CNDS IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly developmental type TA49315.