HGTG34N100E2

Features: • 34A, 1000V• Latch Free Operation• Typical Fall Time - 710ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....BVCES 1000 VCollector-Gate Voltage, RGE =1MW ....

product image

HGTG34N100E2 Picture
SeekIC No. : 004362165 Detail

HGTG34N100E2: Features: • 34A, 1000V• Latch Free Operation• Typical Fall Time - 710ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . ...

floor Price/Ceiling Price

Part Number:
HGTG34N100E2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 34A, 1000V
• Latch Free Operation
• Typical Fall Time - 710ns
• High Input Impedance
• Low Conduction Loss



Pinout

  Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..BVCES 1000 V
Collector-Gate Voltage, RGE =1MW . . . . . . . . . . . . . . . . . . . . . .. .  . .VCGR 1000 V
Collector Current Continuous at TC = +25. . . . . . . . . . . . . . . . . . .  . . IC25 55 A
at VGE = 15V, at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 34 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . .  . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = +150 . . . . . . . .SSOA 200A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . .TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . tSC 3 s
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 s



Description

The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG34N100E2 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The much lower on-state voltage drop varies only moderately between +25 and +150.The HGTG34N100E2 IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
Isolators
Circuit Protection
Power Supplies - External/Internal (Off-Board)
View more