HGTP11N120CN

Features:

• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC= 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . IC25 43 A
At TC= 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 22A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGEM ±30 V
Switching Safe Operating Area at TJ= 150 (Figure 2) . . . . . . . . .SSOA 55A at 1200V
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PD 298 W
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .2.38 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . .  . TL 260
Short Circuit Withstand Time (Note 2) at VGE= 15V . . . . . . . . . . . . . . . . . . . . . tSC 8µs
Short Circuit Withstand Time (Note 2) at VGE= 12V . . . . . . . . . . . . . . . . . . . ..tSC 15µs


Description

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS  are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The  HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49291.