HGTP12N60D1

Features:

• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss


Pinout




Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . .. . . .. .. .. .. .. .. . BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . .. . . . . . .. .. .. .. .. .. ..  . BVCGR 600 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . .. .. .. .. .. .. . IC25 21 A
at VGE = 15V at TC = +90 . . . . . . . . . . . . . . . . . . .  . . . . . . . . .. .. .. .. .. .. IC90 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. ..  ICM 48 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. VGES ±25 V
Switching Safe Operating Area at TJ = +150. . .. .. .. .. .. .. .. SSOA 30A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. ..  . PD 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . .. . . . . . . . . .. .. .. .. .. .. . 0.6 W/
Operating and Storage Junction Temperature Range . . . .. .. ...TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . .  .TL 260


Description

The HGTP12N60D1 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

The HGTP12N60D1IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.