HGTP12N60D1

Features: • 12A, 600V• Latch Free Operation• Typical Fall Time <500ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . .. . . .. .. .. .. .. .. . BVCES 600 VCollector-Gate Voltage ...

product image

HGTP12N60D1 Picture
SeekIC No. : 004362192 Detail

HGTP12N60D1: Features: • 12A, 600V• Latch Free Operation• Typical Fall Time <500ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . ....

floor Price/Ceiling Price

Part Number:
HGTP12N60D1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss



Pinout

  Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . .. . . .. .. .. .. .. .. . BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . .. . . . . . .. .. .. .. .. .. ..  . BVCGR 600 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . .. .. .. .. .. .. . IC25 21 A
at VGE = 15V at TC = +90 . . . . . . . . . . . . . . . . . . .  . . . . . . . . .. .. .. .. .. .. IC90 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. ..  ICM 48 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. VGES ±25 V
Switching Safe Operating Area at TJ = +150. . .. .. .. .. .. .. .. SSOA 30A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. ..  . PD 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . .. . . . . . . . . .. .. .. .. .. .. . 0.6 W/
Operating and Storage Junction Temperature Range . . . .. .. ...TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . .  .TL 260



Description

The HGTP12N60D1 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

The HGTP12N60D1IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Transformers
Memory Cards, Modules
Motors, Solenoids, Driver Boards/Modules
Boxes, Enclosures, Racks
Isolators
Soldering, Desoldering, Rework Products
View more