IGBT Transistors Coil Dri 20A 350V
HGTP20N35G3VL: IGBT Transistors Coil Dri 20A 350V
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Features: • 12A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall ...
Features: • 12A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
Features: • 40A, 600V TJ = 25oC• 600V Switching SOA Capability• Typical Fall Tim...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 375 V | ||
Collector-Emitter Saturation Voltage : | 1.6 V | Maximum Gate Emitter Voltage : | +/- 10 V | ||
Continuous Collector Current at 25 C : | 20 A | Gate-Emitter Leakage Current : | 590 uA | ||
Power Dissipation : | 150 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220AB-3 | Packaging : | Tube |
This HGTP20N35G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP20N35G3VL include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.