Features: • 5.3A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150• Short Circuit Rating• Low Conduction Loss• Avalanche Rated• Temperature Compensating SABER™ ModelThermal Impe...
HGTP1N120BN: Features: • 5.3A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150• Short Circuit Rating• Low C...
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The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTD1N120BNS and HGTP1N120BN have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The HGTD1N120BNS and HGTP1N120BN IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49316.