HGTP1N120BN

Features: • 5.3A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150• Short Circuit Rating• Low Conduction Loss• Avalanche Rated• Temperature Compensating SABER™ ModelThermal Impe...

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HGTP1N120BN Picture
SeekIC No. : 004362199 Detail

HGTP1N120BN: Features: • 5.3A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150• Short Circuit Rating• Low C...

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Part Number:
HGTP1N120BN
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• 5.3A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
  Thermal Impedance SPICE Model
  www.intersil.com
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
  Components to PC Boards"



Pinout

  Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC25 5.3 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 2.7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .    EAV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs



Description

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This  HGTD1N120BNS and HGTP1N120BN have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The  HGTD1N120BNS and HGTP1N120BN IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49316.




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