Features: • 6A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150• Short Circuit Rating• Low Conduction Loss• Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Board...
HGTP3N60C3: Features: • 6A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150• Short Circuit Rating• Low Conduction...
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The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTD3N60C3S and the HGTP3N60C3 devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
The HGTD3N60C3S and the HGTP3N60C3 IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113.