HGTP3N60A4

IGBT Transistors 600V N-Channel IGBT NPT Series

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SeekIC No. : 00143704 Detail

HGTP3N60A4: IGBT Transistors 600V N-Channel IGBT NPT Series

floor Price/Ceiling Price

Part Number:
HGTP3N60A4
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.05 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 17 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 70 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 2.05 V
Continuous Collector Current at 25 C : 17 A
Power Dissipation : 70 W


Features:

• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .  70ns at TJ = 125oC
•12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"




Specifications

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

ALL TYPES
UNITS
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25oC
IC25
17
A
At TC = 110oC .
IC110
8
A
Collector Current Pulsed (Note 1)
ICM
40
A
Gate to Emitter Voltage Continuous
VGES
± 20
V
Gate to Emitter Voltage Pulsed
VGEM
± 30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2
SSOA
15A at600V
Single Pulse Avalanche Energy at TC = 25oC.
EAS
12mJ at 3A
Power Dissipation Total at TC = 25oC
PD
70
W
Power Dissipation Derating TC > 25oC
0.56
W/oC
Operating and Storage Junction Temperature Range
TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
oC
Package Body for 10s, See Tech Brief 334
TPKG
260
oC



Parameters:

Technical/Catalog InformationHGTP3N60A4
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)17A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Power - Max70W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTP3N60A4
HGTP3N60A4



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