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HGTP1N120BND

Features: • 5.3A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150• Short Circuit Rating• Low Conduction Loss• Temperature Compensating SABER™ Mode Thermal Impedance SPICE Model www.i...

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SeekIC No. : 004362200 Detail

HGTP1N120BND: Features: • 5.3A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150• Short Circuit Rating• Low C...

HGTP1N120BND Data Sheet

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Part Number:
HGTP1N120BND
Supply Ability:
5000

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Product Details

Description



Features:

• 5.3A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Mode
  Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
  Components to PC Boards"


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 5.3 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 2.7 A
Average Rectified Forward Current at TC = 148 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 4 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs


Description

The HGTP1N120BND and HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The HGTP1N120BND and HGT1S1N120BNDS IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).

The HGTP1N120BND and HGT1S1N120BNDS IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49314.




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