Features: • 15A and 20A, 400V and 500V• VCE(ON) 2.5V• TFI 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• No Anti-Parallel DiodeApplication• Power Supplies• Motor Drives• Protection CircuitsPinoutSpecificati...
HGTH20N50C1: Features: • 15A and 20A, 400V and 500V• VCE(ON) 2.5V• TFI 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• No Anti-Parallel Di...
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The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 can be operated directly from low-power integrated circuits.