HGTG30N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series

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HGTG30N60A4D: IGBT Transistors 600V N-Channel IGBT SMPS Series

floor Price/Ceiling Price

US $ 4.34~6.37 / Piece | Get Latest Price
Part Number:
HGTG30N60A4D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $6.37
  • $5.23
  • $4.72
  • $4.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.8 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 75 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 463 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 463 W


Features:

• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com





Specifications



Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
HGTG30N60A4D Full Production RoHS Compliant $9.64 TO-247 3 RAIL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: 30N60A4D
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG30N60A4D is available. Click here for more information .


Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL





Description

The HGTG30N60A4D is a MOS gated high voltageswitching devices combining the best features of MOSFETsand bipolar transistors. This device has the high inputimpedance of a MOSFET and the low on-state conductionloss of a bipolar transistor. The much lower on-state voltagedrop varies only moderately between 25oC and 150oC. TheIGBT used is the development type TA49343. The diodeused in anti-parallel is the development type TA49373.

This HGTG30N60A4D IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode power supplies.Formerly Developmental Type TA49345.






Parameters:

Technical/Catalog InformationHGTG30N60A4D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 30A
Power - Max463W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTG30N60A4D
HGTG30N60A4D



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